​TO-220 Aluminum Nitride Ceramic Substrate | TOUSEN

The TO-220 Aluminum Nitride Ceramic Substrate provides exceptional thermal management for high-power electronic applications with a thermal conductivity of 170W/mK and dielectric constant of 8.7. This advanced ceramic substrate offers excellent electrical insulation properties while efficiently dissipating heat from power semiconductors. The aluminum nitride material delivers high mechanical strength and reliable performance in demanding thermal environments, making it an ideal solution for power density applications where both thermal management and electrical isolation are critical.

Designed specifically for high-power LEDs, IGBT modules, and MOS transistors, this ceramic substrate maintains stable operation under extreme thermal conditions. With a density of 3.3g/cm³ and superior thermal expansion characteristics, the material ensures compatibility with various semiconductor packages and mounting configurations. The white aluminum nitride ceramic substrate supports custom sizing to meet specific application requirements, providing designers with flexibility in thermal management solutions for power electronics, communication devices, and industrial control systems.

This thermal management substrate operates effectively in high-frequency applications, offering low loss tangent and high volume resistivity for enhanced electrical performance. The combination of thermal conductivity and electrical insulation makes it suitable for advanced power modules where heat dissipation and signal integrity are paramount. The ceramic substrate's material properties ensure long-term reliability in automotive electronics, renewable energy systems, and high-performance computing applications.